ROTAX

Full 3D sphere angle-dependent measurements

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Mechanical two-axis rotator to perform fully automatable 3D measurements of angle-dependent properties of solid state materials - at low temperatures, high magnetic fields and small sample space.

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Dr. Peter Neumann

Product overview

Functionality

The Tensormeter is designed for automated precision measurements of resistances and voltages. It unites the benefits of Lock-in Amplifiers and Source/Measure Units through an innovative flexible architecture based on an integrated matrix switch. Tensormeter RTM1 enables the automated recording of the complete Resistivity Tensor (Rx, Ry, RH) with one single device, even on unpattern thin films. With excellent AC and DC performance, it covers the range from Nano-Ohm to Giga-Ohms with at least 8 digits of dynamic range.

Tensormeter is designed for automated precision measurements of resistance and voltages.

It unites the benefits of both Lock-in Amplifiers and Source/Measure Units through an innovative flexible architecture.

Tensormeter can be used for thin film characterization, wafer and device testing as well as materials research.

 

Application fields

Materials research and characterization

  • solid state physics

  • semiconductor physics

  • magnetism

  • flexible electronics

  • spintronics

  • new functional electronic materials and devices

 

Industrial R&D and wafer/device testing

  • microelectronic devices

  • memory devices

  • transistors, diodes

  • LED/OLED

  • solar cells

  • displays, TCO

  • sensors

Benefits 

  • Replaces all standard devices for electrical characterization measurements (e.g. Lock-in Amplifier, SMU, DMM).

  • Overcomes the limitations of stationary 4-point measurements by an integrated Matrix Switch.

  • Offers presets for van-der-Pauw and Resistance Tensor measurements and allows for full user configurability.

  • Makes complex sample preparation unnecessary (e.g. lithographic structuring).

  • Allows for easy connectivity to many different measurement setups (e.g. probe stations, cryostats, vacuum systems).

  • Saves measuring time and enhances sample throughput.

Features

  • Reconfigurable device architecture based on an integrated switching matrix

  • 8 user-defined channels (BNC connectors), whose function (input or output) can be freely determined

  • Conventional AC and DC 4-wire measurements with fixed connections (Kelvin/ Hall geometry)

  • AC and DC measurements with alternating connections (van-der-Pauw geometry) with one device

  • Simultaneous measurement of exactly separated absolute values for longitudinal and transverse resistances without lithographic patterning

  • Software presets for common measurement modes, but any user-specific switching sequences can be specified

  • TCP-based communication, easy integration in any environment (e.g. Labview, C, Python)

Electrical

  • Precission: <0.1 ppm 

  • Continuous dynamic range: > 8 digits 

  • Symmetrical Output: DC to 20 kHz, ±20 V, ±100 mA 

  • Output noise: < -140 dBFS 

  • Pulse / arbitrary function output with 10 μs resolution 

  • Fully controllable integrated 8x4 switching matrix 

Hardware / software

  • TCP-based user connection 

  • Client communication examples for LabView and Python 

  • 19” rack-mountable device, 3 height units,
    25 cm depth 

  • Power demand < 30 W, PSU included 

  • BNC front connectors, 50 Ω type 

  • USB Type B communication connector 

Electrical specifications
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Dr. Denys Makarov

Helmholtz-Zentrum Dresden-Rossendorf HZDR

Denys investigates magnetic nanostructures for new spintronics devices and new magnetic memories and sensors. He uses Tensormeter for ...

 

Denys investigates magnetic nanostructures for new spintronics devices and new magnetic memories and sensors. He uses Tensormeter for ...

Check out his latest publication.

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Dr. Florin Radu

Helmholtz-Zentrum Berlin HZB

Stelle deine Team vor! Füge Bilder, Texte und Links hinzu oder verbinde Daten aus deiner Kollektion.

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Dr. Mykola Vinnichenko

Fraunhofer Institute for Ceramic Systems IKTS

Stelle deine Team vor! Füge Bilder, Texte und Links hinzu oder verbinde Daten aus deiner Kollektion.

Publication Highlights

Thermodynamics and Exchange Stiffness of Asymmetrically Sandwiched Ultrathin Ferromagnetic Films...

Yastremsky et al., Phys. Rev. Applied 12, 064038 (2019)

Highly compliant planar Hall effect sensor with sub 200 nT sensitivity

Granell et al., npj Flexible Electronics 3, 3 (2019)

Nanomagnetism of Magnetoelectric Granular Thin-Film Antiferromagnets

Appel et al., Nano Letters 9 (3), 1682-1687 (2019)

Anomalous Hall-like transverse magneto-resistance in Au thin films on Y3Fe5O12

Kosub et al., Appl. Phys. Lett. 113, 222409 (2018)

Evolution of the spin hall magneto-resistance in Cr2O3/Pt bilayers close to the Néel temperature

Schlitz et al., Appl. Phys. Lett. 112, 132401 (2018)

Purely antiferromagnetic magnetoelectric random access memory

Kosub et al., Nature Communication 8, 13985 (2017)

Nanomagnetism of Magnetoelectric Granular Thin-Film Antiferromagnets

Appel et al., Nano Letters 9 (3), 1682-1687 (2019)

Anomalous Hall-like transverse magnetoresistance in Au thin films on Y3Fe5O12

Kosub et al., Appl. Phys. Lett. 113, 222409 (2018)